56N60M2 Refurbished tested

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56N60M2 Refurbished tested

~~Rs. 120.00~~ Rs. 90.00

The STW56N60M2 is not an IGBT, but rather an N-channel MDmesh M2 Power MOSFET from STMicroelectronics. It is a 600V, 52A device with a low on-resistance of 0.045 ohms, designed for high-efficiency power applications like converters. Key features include a TO-247 package, excellent switching performance, and suitability for demanding designs requiring low on-resistance...

Categories : Mosfet and Igbt

56N60M2 Refurbished tested

~~Rs. 120.00~~ Rs. 90.00

Description

The STW56N60M2 is not an IGBT, but rather an N-channel MDmesh M2 Power MOSFET from STMicroelectronics. It is a 600V, 52A device with a low on-resistance of 0.045 ohms, designed for high-efficiency power applications like converters. Key features include a TO-247 package, excellent switching performance, and suitability for demanding designs requiring low on-resistance and optimized switching.

Key Specifications:

Manufacturer: STMicroelectronics
Part Number: STW56N60M2
Device Type: N-channel Power MOSFET
Technology: MDmesh M2
Drain-Source Voltage (Vds): 600V
Continuous Drain Current (Id): 52A
On-Resistance (Rds(on)): 0.045 ohm (typical)
Package: TO-247

Key Features and Benefits:

Low On-Resistance: Achieved through a strip layout and optimized vertical structure, leading to reduced conduction losses.
Optimized Switching: The device exhibits efficient switching characteristics.
High Efficiency: Its features make it suitable for high-efficiency power converters.
Ruggedness: The 600V rating and M2 technology contribute to its robustness.