FGA40N65 Refurbished IGBT Tested (qyt 10)

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FGA40N65 Refurbished IGBT Tested (qyt 10)

~~Rs. 1,000.00~~ Rs. 800.00

The FGA40N65 is an N-channel, 650V, 40A insulated gate bipolar transistor (IGBT) from onsemi, using Field Stop (FS) Trench technology to achieve low on-state voltage, fast switching, and high current capabilities. It is suitable for applications like inverters, UPS, welders, and telecom, featuring a positive temperature coefficient for parallel operation and a...

Categories : Mosfet and Igbt

FGA40N65 Refurbished IGBT Tested (qyt 10)

~~Rs. 1,000.00~~ Rs. 800.00

Description

The FGA40N65 is an N-channel, 650V, 40A insulated gate bipolar transistor (IGBT) from onsemi, using Field Stop (FS) Trench technology to achieve low on-state voltage, fast switching, and high current capabilities. It is suitable for applications like inverters, UPS, welders, and telecom, featuring a positive temperature coefficient for parallel operation and a maximum junction temperature of 175°C. It typically comes in a TO-3P package and includes a fast, co-packaged free-wheeling diode with low forward voltage.

Key Characteristics

Type: N-channel Insulated Gate Bipolar Transistor (IGBT)
Voltage: 650 V (maximum Collector-Emitter voltage)
Current: 40 A (maximum Collector current)
Technology: Novel Field Stop (FS) Trench construction
Features:
- Low on-state voltage drop (VCE(sat))
- Fast switching characteristics (low EOFF)
- High current handling
- Positive temperature coefficient for ease of parallel operation
- Maximum junction temperature (TJ) of 175°C
Package: Often a TO-3P package
Components: Includes a co-packaged soft and fast free-wheeling diode
Applications: Well-suited for high-power and switching applications such as solar inverters, Uninterruptible Power Supplies (UPS), welders, induction heating, and Power Factor Correction (PFC).