FGA60N65 Refurbished IGBT Tested (qyt 10)

Home Mosfet and Igbt FGA60N65 Refurbished IGBT Tested (qyt 10)

300/600v (semikron) igbt module refurbished

Rs. 1,600.00

FGA40N65 Refurbished IGBT Tested (qyt 10)

Rs. 800.00

FGA60N65 Refurbished IGBT Tested (qyt 10)

~~Rs. 1,100.00~~ Rs. 900.00

The FGA60N65 is a Fairchild (now onsemi) Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications, featuring a 650V rating and 60A current capability. Key characteristics include high current capacity, low conduction and switching losses due to its novel field stop technology, fast switching speeds, and high input impedance. It is used in power...

Categories : Mosfet and Igbt

FGA60N65 Refurbished IGBT Tested (qyt 10)

~~Rs. 1,100.00~~ Rs. 900.00

Description

The FGA60N65 is a Fairchild (now onsemi) Field Stop Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage applications, featuring a 650V rating and 60A current capability. Key characteristics include high current capacity, low conduction and switching losses due to its novel field stop technology, fast switching speeds, and high input impedance. It is used in power electronics for applications such as solar inverters, uninterruptible power supplies (UPS), welding, and power factor correction (PFC).

Key Features and Benefits:

High Voltage and Current: Rated for 650V and 60A, making it suitable for high-power applications.
Efficient Design: Employs novel Field Stop technology to achieve low conduction (VCE(sat) = 1.9 V Typ.) and low switching losses.
Fast Switching: Offers fast switching speeds, contributing to overall system efficiency.
High Input Impedance: A characteristic of IGBTs, which simplifies driver requirements and integration.
Easy Parallel Operation: Features a positive temperature coefficient, facilitating parallel operation of multiple devices.
Robustness: Designed to operate reliably in demanding environments and high-temperature conditions.
Compliance: RoHS compliant.